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BLF888D UHF power LDMOS transistor

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Description

BLF888D; BLF888DS UHF power LDMOS transistor Rev.2 * 27 June 2014 Product data sheet 1.Product profile 1.1 General .
A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications.

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Datasheet Specifications

Part number
BLF888D
Manufacturer
NXP ↗
File Size
132.41 KB
Datasheet
BLF888D-NXP.pdf
Description
UHF power LDMOS transistor

Features

* High efficiency
* High power gain
* Excellent ruggedness (VSWR  40 : 1 through all phases)
* Excellent thermal stability
* Integrated ESD protection
* One Doherty design covers the full bandwidth from 470 MHz to 860 MHz
* Internal input matching for ease of use
* C

Applications

* The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V in an ultra wide Doherty application. Test signal f PL(AV) Gp D (MHz) (W) (dB) (%) DVB-T (8k OFDM) 470 to 860 115 to 134 [

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