BLF8G27LS-150V Datasheet - NXP

BLF8G27LS-150V, Power LDMOS transistor

BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev.3 * 26 June 2013 Product data sheet 1.Product profile 1.1 General .
150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

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BLF8G27LS-150V-NXP.pdf

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Datasheet Details

Part number:

BLF8G27LS-150V

Manufacturer:

NXP ↗

File Size:

195.94 KB

Description:

Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Decoupling leads to enable improved video bandwidth (60 MHz typical)

Applications

* at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2600 to 2700 1300 28 45 18 30

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BLF8G27LS-150V Power LDMOS transistor NXP

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