BLF8G27LS-150V Datasheet - NXP

BLF8G27LS-150V Power LDMOS transistor

150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M .

BLF8G27LS-150V Features

* Excellent ruggedness

* High efficiency

* Low Rth providing excellent thermal stability

* Decoupling leads to enable improved video bandwidth (60 MHz typical)

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects provid

BLF8G27LS-150V-NXP.pdf