BLF8G38LS-75V Datasheet - NXP

BLF8G38LS-75V, Power LDMOS transistor

BLF8G38LS-75V Power LDMOS transistor Rev.3 * 1 July 2014 Product data sheet 1.Product profile 1.1 General .
75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz.

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BLF8G38LS-75V-NXP.pdf

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Datasheet Details

Part number:

BLF8G38LS-75V

Manufacturer:

NXP ↗

File Size:

130.71 KB

Description:

Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Decoupling leads to enable improved video bandwidth
* Designed for broadband operation (3400 MHz to 3800 MHz)
* Lower output capacitance for improved performance in Doher

Applications

* at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 3400 to 3800 600 30 20 15.5 26

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BLF8G38LS-75V Power LDMOS transistor NXP

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