BLF8G10LS-160V Datasheet - Ampleon

BLF8G10LS-160V, Power LDMOS transistor

BLF8G10LS-160V Power LDMOS transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 925 MHz to 960 MHz.

datasheet Preview Page 1 from Datasheet4u.com

BLF8G10LS-160V-Ampleon.pdf

BLF8G10LS-160V Datasheet Preview — Preview of BLF8G10LS-160V PDF

Datasheet Details

Part number:

BLF8G10LS-160V

Manufacturer:

Ampleon

File Size:

356.92 KB

Description:

Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Decoupling leads to enable improved video bandwidth (60 MHz typical)
* Designed for broadband operation (925 MHz to 960 MHz)
* Lower output capacitance for improved performance in Doher

Applications

* at frequencies from 925 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 925 to 960 1100 30 35 19.9 30 38

BLF8G10LS-160V Distributors

📁 Related Datasheet

BLF8G27LS-140V BLF8G27LS-150GV BLF8G27LS-150V BLF8G38LS-75V BLF820 BLF861

📌 All Tags

BLF8G10LS-160V Power LDMOS transistor Ampleon

Ampleon BLF8G10LS-160V-like datasheet