BLF8G10LS-160V Power LDMOS transistor

Ampleon

Description

BLF8G10LS-160V Power LDMOS transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 925 MHz to 960 MHz.

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Datasheet Specifications

Part number: BLF8G10LS-160V
Manufacturer: Ampleon
File Size: 356.92 KB
Datasheet: BLF8G10LS-160V-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Decoupling leads to enable improved video bandwidth (60 MHz typical)
* Designed for broadband operation (925 MHz to 960 MHz)
* Lower output capacitance for improved performance in Doher

Applications

* at frequencies from 925 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 925 to 960 1100 30 35 19.9 30 38

BLF8G10LS-160V Distributors

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BLF8G10LS-160V Power LDMOS transistor Ampleon

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