BLF8G10LS-270V Power LDMOS transistor

Ampleon

Description

BLF8G10LS-270V; BLF8G10LS-270GV Power LDMOS transistor Rev.2 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descript.
270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 790 MHz to 960 MHz.

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Datasheet Specifications

Part number: BLF8G10LS-270V
Manufacturer: Ampleon
File Size: 446.40 KB
Datasheet: BLF8G10LS-270V-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for broadband operation (790 MHz to 960 MHz)

Applications

* at frequencies from 790 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal f VDS PL(AV) Gp D ACPR5M (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 869 to 894

BLF8G10LS-270V Distributors

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BLF8G10LS-270V Power LDMOS transistor Ampleon

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