270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 790 MHz to 960 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.
Test signal f
BLF8G10LS-270GV Features
* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for broadband operation (790 MHz to 960 MHz)
* Lower output capacitance for improved performance in Doherty applications
* Decoupling leads to enable improved video bandwidth (
Datasheet Details
BLF8G10LS-270GV, BLF8G10LS-270V
Ampleon
446.40 KB
Power ldmos transistor.
This datasheet PDF includes multiple part numbers: BLF8G10LS-270GV, BLF8G10LS-270V.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
📌 All Tags
