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BLF8G10LS-270GV, BLF8G10LS-270V Datasheet - Ampleon

BLF8G10LS-270GV, BLF8G10LS-270V, Power LDMOS transistor

BLF8G10LS-270V; BLF8G10LS-270GV Power LDMOS transistor Rev.2 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descript.
270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 790 MHz to 960 MHz.
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BLF8G10LS-270V-Ampleon.pdf

This datasheet PDF includes multiple part numbers: BLF8G10LS-270GV, BLF8G10LS-270V. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

BLF8G10LS-270GV, BLF8G10LS-270V

Manufacturer:

Ampleon

File Size:

446.40 KB

Description:

Power LDMOS transistor

Note:

This datasheet PDF includes multiple part numbers: BLF8G10LS-270GV, BLF8G10LS-270V.
Please refer to the document for exact specifications by model.

Features

* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for broadband operation (790 MHz to 960 MHz)

Applications

* at frequencies from 790 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal f VDS PL(AV) Gp D ACPR5M (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 869 to 894

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