Description
BLF8G10LS-270V; BLF8G10LS-270GV Power LDMOS transistor Rev.2 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descript.
270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 790 MHz to 960 MHz.
Features
* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for broadband operation (790 MHz to 960 MHz)
Applications
* at frequencies from 790 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal
f
VDS
PL(AV)
Gp
D ACPR5M
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
869 to 894
