BLF8G10LS-300P Datasheet - Ampleon

BLF8G10LS-300P - Power LDMOS transistor

300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2

BLF8G10LS-300P Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects providing excellent pre-distortability

* Internally matched fo

Datasheet Details

BLF8G10LS-300P

Ampleon

346.89 KB

Power ldmos transistor.

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