BLF8G10LS-300P Datasheet - Ampleon

BLF8G10LS-300P, Power LDMOS transistor

BLF8G10LS-300P Power LDMOS transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

datasheet Preview Page 1 from Datasheet4u.com

BLF8G10LS-300P-Ampleon.pdf

BLF8G10LS-300P Datasheet Preview — Preview of BLF8G10LS-300P PDF

Datasheet Details

Part number:

BLF8G10LS-300P

Manufacturer:

Ampleon

File Size:

346.89 KB

Description:

Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability

Applications

* at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 758 to 803 28 65 20.5 32 35 [1] [1] T

BLF8G10LS-300P Distributors

📁 Related Datasheet

BLF8G27LS-140V BLF8G27LS-150GV BLF8G27LS-150V BLF8G38LS-75V BLF820 BLF861

📌 All Tags

BLF8G10LS-300P Power LDMOS transistor Ampleon

Ampleon BLF8G10LS-300P-like datasheet