BLF8G10LS-300P Datasheet - Ampleon

BLF8G10LS-300P Power LDMOS transistor

300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2.

BLF8G10LS-300P Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects providing excellent pre-distortability

* Internally matched fo

BLF8G10LS-300P-Ampleon.pdf