Part number:
BLF8G10LS-300P
Manufacturer:
Ampleon
File Size:
346.89 KB
Description:
Power ldmos transistor.
300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2
BLF8G10LS-300P Features
* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Lower output capacitance for improved performance in Doherty applications
* Designed for low memory effects providing excellent pre-distortability
* Internally matched fo
Datasheet Details
BLF8G10LS-300P
Ampleon
346.89 KB
Power ldmos transistor.
📁 Related Datasheet
📌 All Tags