BLF8G10LS-300P Power LDMOS transistor

Ampleon

Description

BLF8G10LS-300P Power LDMOS transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

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Datasheet Specifications

Part number: BLF8G10LS-300P
Manufacturer: Ampleon
File Size: 346.89 KB
Datasheet: BLF8G10LS-300P-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability

Applications

* at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 758 to 803 28 65 20.5 32 35 [1] [1] T

BLF8G10LS-300P Distributors

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BLF8G10LS-300P Power LDMOS transistor Ampleon

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