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BLF8G10LS-160, BLF8G10L-160 Datasheet - Ampleon

BLF8G10LS-160, BLF8G10L-160, Power LDMOS transistor

BLF8G10L-160; BLF8G10LS-160 Power LDMOS transistor Rev.4 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz.
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BLF8G10L-160-Ampleon.pdf

This datasheet PDF includes multiple part numbers: BLF8G10LS-160, BLF8G10L-160. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

BLF8G10LS-160, BLF8G10L-160

Manufacturer:

Ampleon

File Size:

510.21 KB

Description:

Power LDMOS transistor

Note:

This datasheet PDF includes multiple part numbers: BLF8G10LS-160, BLF8G10L-160.
Please refer to the document for exact specifications by model.

Features

* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for broadband operation (920 MHz to 960 MHz)

Applications

* at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 920 to 960 1100 30 35 19.7 29 3

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