BLF8G10LS-160 - Power LDMOS transistor
160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%)
BLF8G10LS-160 Features
* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for broadband operation (920 MHz to 960 MHz)
* Lower output capacitance for improved performance in Doherty applications
* Designed for low memory effects providing excellent p
