BLF8G10LS-160, BLF8G10L-160 Datasheet - Ampleon

BLF8G10LS-160 Power LDMOS transistor

160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) .

BLF8G10LS-160 Features

* Excellent ruggedness

* High efficiency

* Low Rth providing excellent thermal stability

* Designed for broadband operation (920 MHz to 960 MHz)

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects providing excellent p

BLF8G10L-160-Ampleon.pdf

BLF8G10LS-160 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF8G10LS-160, BLF8G10L-160. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

BLF8G10LS-160, BLF8G10L-160

Manufacturer:

Ampleon

File Size:

510.21 KB

Description:

Power ldmos transistor.

Note:

This datasheet PDF includes multiple part numbers: BLF8G10LS-160, BLF8G10L-160.
Please refer to the document for exact specifications by model.

BLF8G10LS-160 Distributor

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BLF8G10LS-160 BLF8G10L-160 Power LDMOS transistor Ampleon