BLF8G10L-160 Datasheet - Ampleon

BLF8G10L-160 Power LDMOS transistor

160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) .

BLF8G10L-160 Features

* Excellent ruggedness

* High efficiency

* Low Rth providing excellent thermal stability

* Designed for broadband operation (920 MHz to 960 MHz)

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects providing excellent p

BLF8G10L-160-Ampleon.pdf