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BLF871 Datasheet - NXP Semiconductors

BLF871_NXPSemiconductors.pdf

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Datasheet Details

Part number:

BLF871

Manufacturer:

NXP ↗ Semiconductors

File Size:

203.23 KB

Description:

Uhf power ldmos transistor.

BLF871, UHF power LDMOS transistor

A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The transistor can deliver 100 W broadband from HF to 1 GHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Table 1.

Typical

BLF871 Features

* 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: ‹ Peak envelope power load power = 100 W ‹ Power gain = 21 dB ‹ Drain efficiency = 47 % ‹ Third order intermodulation distortion =

* 35 dBc

* DVB performance at 858 M

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