BLF882S datasheet, transistor equivalent, NXP Semiconductors

BLF882S Features and benefits

* Integrated ESD protection
* Excellent ruggedness
* High power gain
* High efficiency
* Excellent reliability
* Easy power control
* Complian.

BLF882S Application

and industrial applications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. The excellen.

BLF882S Description

A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. The excellent ruggedness and broadband performance of this device mak.

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BLF882S

📁 Related Datasheet

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BLF882S Datasheet, transistor equivalent, NXP Semiconductors

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BLF882S Features and benefits

BLF882S Application

BLF882S Description