BLF882S, BLF882 UHF power LDMOS transistor

NXP Semiconductors

Description

BLF882; BLF882S UHF power LDMOS transistor Rev.2 * 3 July 2015 Product data sheet 1.Product profile 1.1 General .
A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

📥 Download Datasheet

BLF882S Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF882S, BLF882. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: BLF882S, BLF882
Manufacturer: NXP ↗ Semiconductors
File Size: 137.48 KB
Datasheet: BLF882-NXPSemiconductors.pdf
Description: UHF power LDMOS transistor
Note: This datasheet PDF includes multiple part numbers: BLF882S, BLF882.
Please refer to the document for exact specifications by model.

Features

* Integrated ESD protection
* Excellent ruggedness
* High power gain
* High efficiency
* Excellent reliability
* Easy power control

Applications

* and industrial applications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Test information RF performance at Tcase = 25 C in a class-AB

BLF882S Distributors

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BLF882 UHF power LDMOS transistor NXP Semiconductors

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