BLF882S Datasheet - NXP Semiconductors

UHF power LDMOS transistor

BLF882S Features

* Integrated ESD protection

* Excellent ruggedness

* High power gain

* High efficiency

* Excellent reliability

* Easy power control

* Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3 Applications

* Transmitter applications i

BLF882S General Description

A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. .

BLF882S Datasheet (137.48 KB)

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Datasheet Details

Part number:

BLF882S

Manufacturer:

NXP ↗ Semiconductors

File Size:

137.48 KB

Description:

Uhf power ldmos transistor.

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BLF882S UHF power LDMOS transistor NXP Semiconductors

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BLF882S Features

BLF882S General Description

Datasheet Details

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