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BLF888BS, BLF888B - UHF power LDMOS transistor

NXP Semiconductors

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BLF888BS Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF888BS, BLF888B. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	BLF888BS, BLF888B
Manufacturer	NXP ↗ Semiconductors
File Size	319.32 KB
Description	UHF power LDMOS transistor
Datasheet	BLF888B-NXPSemiconductors.pdf
Note	This datasheet PDF includes multiple part numbers: BLF888BS, BLF888B. Please refer to the document for exact specifications by model.

BLF888BS Product details

Description

A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

Features

Excellent ruggedness.
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
High power gain.
High efficiency.
Designed for broadband operation (470 MHz to 860 MHz).
Internal input matching for high gain and optimum broadband operation.
Excellent reliability.
Easy power control.
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3.

📁 BLF888BS Similar Datasheet

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Published: Jan 27, 2016 |