Datasheet Details
Part number:
BLF888BS, BLF888B
Manufacturer:
NXP ↗ Semiconductors
File Size:
319.32 KB
Description:
Uhf power ldmos transistor.
Note:
This datasheet PDF includes multiple part numbers: BLF888BS, BLF888B.
Please refer to the document for exact specifications by model.
BLF888BS, BLF888B, UHF power LDMOS transistor
A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.
The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.
Table 1.
Application information RF performance at VDS = 50 V unless otherwise specified.
Mo
BLF888BS Features
* Excellent ruggedness
* Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
* High power gain
* High efficiency
* Designed for broadband operation (470 MHz to 860 MHz)
* Internal input matching for high gain and optimum broadband operation
* Excellent reliabili
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