BLF888BS, BLF888B Datasheet - NXP Semiconductors

BLF888BS UHF power LDMOS transistor

A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V unless otherwise specified. Mo.

BLF888BS Features

* Excellent ruggedness

* Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W

* High power gain

* High efficiency

* Designed for broadband operation (470 MHz to 860 MHz)

* Internal input matching for high gain and optimum broadband operation

* Excellent reliabili

BLF888B-NXPSemiconductors.pdf

BLF888BS Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF888BS, BLF888B. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

BLF888BS, BLF888B

Manufacturer:

NXP ↗ Semiconductors

File Size:

319.32 KB

Description:

Uhf power ldmos transistor.

Note:

This datasheet PDF includes multiple part numbers: BLF888BS, BLF888B.
Please refer to the document for exact specifications by model.

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TAGS

BLF888BS BLF888B UHF power LDMOS transistor NXP Semiconductors

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