Description
BLF888B; BLF888BS UHF power LDMOS transistor Rev.2 * 12 July 2013 Product data sheet 1.Product profile 1.1 General .
A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.
Features
* Excellent ruggedness
* Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
* High power gain
* High efficiency
* Designed for broadband operation (470 MHz to 860 MHz)
* Internal input matching for high gain and optimum broadband operation
* Excellent reliabili
Applications
* and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V unless otherwise specified. Mode of operation f
PL(AV) PL(M)
Gp
D IMD3 IMDshldr
(MHz)
(W) (W) (dB
