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BLF8G09LS-270W Power LDMOS transistor

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Description

BLF8G09LS-270W; BLF8G09LS-270GW Power LDMOS transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descript.
270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 716 MHz to 960 MHz.

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Datasheet Specifications

Part number
BLF8G09LS-270W
Manufacturer
Ampleon
File Size
438.54 KB
Datasheet
BLF8G09LS-270W-Ampleon.pdf
Description
Power LDMOS transistor

Features

* Excellent ruggedness
* Device can operate with the supply current delivered through the video leads
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation (716 MHz to 960 MHz)
* Lower output capacitance for improv

Applications

* at frequencies from 716 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal f VDS PL(AV) Gp D ACPR5M (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 716 to 728

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