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BLF8G10LS-160 - Power LDMOS transistor

This page provides the datasheet information for the BLF8G10LS-160, a member of the BLF8G10L-160 Power LDMOS transistor family.

Datasheet Summary

Description

160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Designed for broadband operation (920 MHz to 960 MHz).
  • Lower output capacitance for improved performance in Doherty.

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Datasheet preview – BLF8G10LS-160

Datasheet Details

Part number BLF8G10LS-160
Manufacturer Ampleon
File Size 510.21 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF8G10LS-160 Datasheet
Additional preview pages of the BLF8G10LS-160 datasheet.

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Full PDF Text Transcription

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BLF8G10L-160; BLF8G10LS-160 Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 920 to 960 1100 30 35 19.7 29 38 [1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier. Carrier spacing 5 MHz. 1.
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