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BLF8G10LS-160 - Power LDMOS transistor

Download the BLF8G10LS-160 datasheet PDF. This datasheet also covers the BLF8G10L-160 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Designed for broadband operation (920 MHz to 960 MHz).
  • Lower output capacitance for improved performance in Doherty.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF8G10L-160-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF8G10LS-160
Manufacturer Ampleon
File Size 510.21 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF8G10LS-160 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF8G10L-160; BLF8G10LS-160 Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 920 to 960 1100 30 35 19.7 29 38 [1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier. Carrier spacing 5 MHz. 1.