BLF8G10LS-160 Datasheet | Ampleon

description 160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (m A) (V) (W) (d B) (%) (d Bc) 2-carrier W-CDMA 920 to 960 1100 30 35 19.7 29 - 38 [1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 d B at 0.01 % probability on CCDF per carrier. Carrier spacing 5 MHz. 1.2 Features and benefits - Excellent ruggedness - High efficiency - Low Rth providing excellent thermal stability - Designed for broadband operation (920 MHz to 960 MHz) - Lower output capacitance for improved performance in Doherty applications - Designed for low memory effects providing excellent pre-distortability - Internally matched...