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BLF8G10LS-270GV - Power LDMOS transistor

This page provides the datasheet information for the BLF8G10LS-270GV, a member of the BLF8G10LS-270V Power LDMOS transistor family.

Datasheet Summary

Description

270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 790 MHz to 960 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Designed for broadband operation (790 MHz to 960 MHz).
  • Lower output capacitance for improved performance in Doherty.

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Datasheet preview – BLF8G10LS-270GV

Datasheet Details

Part number BLF8G10LS-270GV
Manufacturer Ampleon
File Size 446.40 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF8G10LS-270GV Datasheet
Additional preview pages of the BLF8G10LS-270GV datasheet.

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Full PDF Text Transcription

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BLF8G10LS-270V; BLF8G10LS-270GV Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 790 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal f VDS PL(AV) Gp D ACPR5M (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 869 to 894 28 67 19.5 31 37[1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 10 MHz. 1.
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