BLF8G10LS-160V Description
160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 925 MHz to 960 MHz. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit. PAR = 7.5 dB at 0.01 % probability on CCDF per carrier.
BLF8G10LS-160V Key Features
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Decoupling leads to enable improved video bandwidth (60 MHz typical)
- Designed for broadband operation (925 MHz to 960 MHz)
- Lower output capacitance for improved performance in Doherty