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BLF8G10LS-160V - Power LDMOS transistor

Datasheet Summary

Description

160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 925 MHz to 960 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth (60 MHz typical).
  • Designed for broadband operation (925 MHz to 960 MHz).
  • Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLF8G10LS-160V
Manufacturer Ampleon
File Size 356.92 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF8G10LS-160V Datasheet
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Full PDF Text Transcription

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BLF8G10LS-160V Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 925 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 925 to 960 1100 30 35 19.9 30 38[1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier. Carrier spacing 5 MHz. 1.
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