BLF8G10LS-160V
BLF8G10LS-160V is Power LDMOS transistor manufactured by Ampleon.
description
160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 925 MHz to 960 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit.
Test signal f
IDq
VDS PL(AV)
Gp
D ACPR
(MHz)
(m A) (V) (W)
(d B) (%) (d Bc)
2-carrier W-CDMA
925 to 960
1100 30 35
19.9 30
- 38[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 d B at 0.01 % probability on CCDF per carrier. Carrier spacing 5 MHz.
1.2 Features and benefits
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Decoupling leads to enable improved video bandwidth (60 MHz typical)
- Designed for broadband operation (925 MHz to 960 MHz)
- Lower output capacitance for improved performance in Doherty applications
- Designed...
