BLF8G10LS-300P
BLF8G10LS-300P is Power LDMOS transistor manufactured by Ampleon.
description
300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit.
Test signal f
PL(AV)
Gp
D
ACPR
(MHz)
(V) (W)
(d B) (%) (d Bc)
2-carrier W-CDMA
758 to 803
28 65
20.5 32
- 35 [1]
[1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 d B at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.
1.2 Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- pliant to...
