BLF8G10LS-300P Overview
300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 758 to 803 28 65 20.5 32 35 [1] [1] Test signal:.
BLF8G10LS-300P Key Features
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty