BLF8G10LS-300P Datasheet PDF - Ampleon Power LDMOS transistor Specs

BLF8G10LS-300P - Power LDMOS transistor

Datasheet Summary

Description

300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

Excellent ruggedness.
High efficiency.
Low thermal resistance providing excellent thermal stability.
Lower output capacitance for improved performance in Doherty.

Datasheet Details

Part number	BLF8G10LS-300P
Manufacturer	Ampleon
File Size	346.89 KB
Description	Power LDMOS transistor
Datasheet	BLF8G10LS-300P Datasheet
Additional preview pages of the BLF8G10LS-300P datasheet.

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Full PDF Text Transcription

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BLF8G10LS-300P Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 758 to 803 28 65 20.5 32 35 [1] [1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. 1.

Published: Apr 26, 2018 |