Datasheet4U Logo Datasheet4U.com

BLF871S Datasheet Uhf Power Ldmos Transistor

Manufacturer: NXP Semiconductors

This datasheet includes multiple variants, all published together in a single manufacturer document.

BLF871S Overview

A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

BLF871S Key Features

  • 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: ‹ Peak enve
  • DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: ‹ Average outp
  • Integrated ESD protection
  • Excellent ruggedness
  • High power gain
  • High efficiency
  • Excellent reliability
  • Easy power control
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

BLF871S Distributor