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BLF878 - UHF power LDMOS transistor

General Description

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz.

Key Features

  • I 2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 300 W N Power gain = 21 dB N Drain efficiency = 46 % N Third order intermodulation distortion =.
  • 35 dBc I DVB performance at 858 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: N Average output power = 75 W N Power gain = 21 dB N Drain efficiency = 32 % N Third order intermodulation distortion =.
  • 32 dBc.

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BLF878 UHF power LDMOS transistor Rev. 02 — 15 June 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at VDS = 42 V in a common-source 860 MHz narrowband test circuit. Mode of operation f (MHz) CW, class AB 2-Tone, class AB PAL BG DVB-T (8k OFDM) [1] [2] PL (W) 300 300 (peak sync.