BLF878 - UHF power LDMOS transistor

Product Overview

NXP Semiconductors

Part number	BLF878
Manufacturer	NXP Semiconductors
File Size	182.68 KB
Description	UHF power LDMOS transistor
Datasheet	BLF878 Datasheet
Additional preview pages of the BLF878 datasheet.

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz.

I 2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 300 W N Power gain = 21 dB N Drain efﬁciency = 46 % N Third order intermodulation distortion =.
35 dBc I DVB performance at 858 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: N Average output power = 75 W N Power gain = 21 dB N Drain efﬁciency = 32 % N Third order intermodulation distortion =.
32 dBc.

📁 Similar Datasheet

Other Datasheets by NXP Semiconductors

Published: Jun 18, 2010 |