BLF878 Datasheet | NXP Semiconductors

description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at VDS = 42 V in a mon-source 860 MHz narrowband test circuit. Mode of operation f (MHz) CW, class AB 2-Tone, class AB PAL BG DVB-T (8k OFDM) [1] [2] PL (W) 300 300 (peak sync.) [1] PL(PEP) PL(AV) Gp (W) 300 (W) 75 21 21 21 21 ηD 60 46 45 32 IMD3 - 35 - 32 [2] (d B) (%) (d Bc) 860 860 (ch69) 858 f1 = 860; f2 = 860.1 - Black video signal, sync expansion: input sync = 33 %; output sync ≥ 27 %. Measured [d Bc] with delta marker at 4.3 MHz from center frequency. CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I 2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 300 W N Power gain = 21 d B N Drain efficiency = 46 % N Third order intermodulation distortion = - 35 d Bc I DVB performance at 858 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: N Average output power = 75 W N Power gain = 21 d B N Drain efficiency = 32 % N Third order intermodulation distortion = - 32 d Bc (4.3 MHz from center frequency) NXP Semiconductors UHF power LDMOS transistor .. I I I I I I I I I I Integrated ESD protection Advanced flange material for optimum thermal behavior and reliability Excellent ruggedness High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Excellent reliability Internal input and output matching for high gain and optimum broadband operation Easy power control pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (Ro HS) 1.3...