BLF872 Datasheet | NXP Semiconductors

UHF power LDMOS transistor Rev. 01 - 20 February 2006 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features s Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: x Peak envelope power load power PL(PEP) = 300 W x Gain Gp = 15 d B x Drain efficiency ηD = 43 % x Third order intermodulation distortion IMD3 = - 28 d Bc s Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: x Average output power PL(AV) = 70 W x Gain Gp = 15 d B x Drain efficiency ηD = 30 % x Third order intermodulation distortion IMD3 = - 28 d Bc (4.3 MHz from center frequency) s Advanced flange material for optimum thermal behavior and reliability s Excellent ruggedness s High power gain s Designed for broadband operation (UHF band) s Excellent reliability s Internal input and output matching for high gain and optimum broadband operation s Source on underside eliminates DC isolators, reducing mon-mode inductance s Easy power control .Data Sheet.in Philips Semiconductors UHF power LDMOS transistor 1.3 Applications s munication transmitter applications in the UHF band s Industrial applications in the UHF band 1.4 Quick reference data Table 1: Quick reference data Typical RF performance at VDS = 32 V and Th = 25 °C in a mon-source narrowband 860 MHz test circuit. [1] Mode of operation CW, class AB 2-tone, class AB PAL BG DVB-T (8K OFDM) [1] [2] [3] f (MHz) 860 f1 = 860; f2 = 860.1 860 (ch69)...