BLF872 - UHF power LDMOS transistor

Product Overview

NXP Semiconductors

Part number	BLF872
Manufacturer	NXP Semiconductors
File Size	179.58 KB
Description	UHF power LDMOS transistor
Datasheet	BLF872 Datasheet
Additional preview pages of the BLF872 datasheet.

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz.

s Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: x Peak envelope power load power PL(PEP) = 300 W x Gain Gp = 15 dB x Drain efﬁciency ηD = 43 % x Third order intermodulation distortion IMD3 =.
28 dBc s Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: x Average output power PL(AV) = 70 W x Gain Gp = 15 dB x Drain efﬁciency ηD = 30 % x Third order i.

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Published: Dec 13, 2010 |