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BLF879P - UHF power LDMOS transistor

General Description

A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Table 1.

Key Features

  • Excellent ruggedness.
  • Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
  • High power gain.
  • High efficiency.
  • Designed for broadband operation (470 MHz to 860 MHz).
  • Internal input matching for high gain and optimum broadband operation.
  • Excellent reliability.
  • Easy power control.
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLF879P; BLF879PS UHF power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 42 V unless otherwise specified. Mode of operation f PL(AV) PL(M) Gp D IMD3 IMDshldr (MHz) (W) (W) (dB) (%) (dBc) (dBc) RF performance in a common source 860 MHz narrowband test circuit 2-tone, class-AB DVB-T (8k OFDM) f1 = 860; f2 = 860.