BLF879PS Datasheet | NXP Semiconductors

description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 42 V unless otherwise specified. Mode of operation f PL(AV) PL(M) Gp D IMD3 IMDshldr (MHz) (W) (W) (d B) (%) (d Bc) (d Bc) RF performance in a mon source 860 MHz narrowband test circuit 2-tone, class-AB DVB-T (8k OFDM) f1 = 860; f2 = 860.1 200 858 95 - 21 47 - 33 - 21 33 - - 31 [1] RF performance in a mon source 470 MHz to 860 MHz broadband test circuit DVB-T (8k OFDM) 858 - 20 32 - - 32 [1] PAR (d B) 8.2 [2] 8.0 [2] [1] Measured [d Bc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 d B at 0.01 % probability on CCDF. 1.2 Features and benefits - Excellent ruggedness - Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W - High power gain - High efficiency - Designed for broadband operation (470 MHz to 860 MHz) - Internal input matching for high gain and optimum broadband operation - Excellent reliability - Easy power control - pliant to Restriction of Hazardous Substances (Ro HS) Directive 2002/95/EC 1.3 Applications - munication transmitter applications in the UHF band - Industrial applications in the UHF band NXP Semiconductors BLF879P;...