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BLF879PS - UHF power LDMOS transistor

This page provides the datasheet information for the BLF879PS, a member of the BLF879P UHF power LDMOS transistor family.

Datasheet Summary

Description

A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Table 1.

Features

  • Excellent ruggedness.
  • Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
  • High power gain.
  • High efficiency.
  • Designed for broadband operation (470 MHz to 860 MHz).
  • Internal input matching for high gain and optimum broadband operation.
  • Excellent reliability.
  • Easy power control.
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3.

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Datasheet preview – BLF879PS

Datasheet Details

Part number BLF879PS
Manufacturer NXP Semiconductors
File Size 229.59 KB
Description UHF power LDMOS transistor
Datasheet download datasheet BLF879PS Datasheet
Additional preview pages of the BLF879PS datasheet.

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Full PDF Text Transcription

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BLF879P; BLF879PS UHF power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 42 V unless otherwise specified. Mode of operation f PL(AV) PL(M) Gp D IMD3 IMDshldr (MHz) (W) (W) (dB) (%) (dBc) (dBc) RF performance in a common source 860 MHz narrowband test circuit 2-tone, class-AB DVB-T (8k OFDM) f1 = 860; f2 = 860.
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