BLF871 - UHF power LDMOS transistor

Product Overview

NXP Semiconductors

Part number	BLF871
Manufacturer	NXP Semiconductors
File Size	203.23 KB
Description	UHF power LDMOS transistor
Datasheet	BLF871 Datasheet
Additional preview pages of the BLF871 datasheet.

A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The transistor can deliver 100 W broadband from HF to 1 GHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 100 W Power gain = 21 dB Drain efficiency = 47 % Third order intermodulation distortion =.
35 dBc.
DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Average output power = 24 W Power gain = 22 dB Drain efficiency = 33 % Third order intermodulation distortion.

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Published: Dec 13, 2010 |