BLF871 - UHF power LDMOS transistor

Product Overview

NXP Semiconductors

Part number	BLF871
Manufacturer	NXP Semiconductors
File Size	203.23 KB
Description	UHF power LDMOS transistor
Datasheet	BLF871 Datasheet
Additional preview pages of the BLF871 datasheet.

A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 100 W Power gain = 21 dB Drain efficiency = 47 % Third order intermodulation distortion =.
35 dBc.
DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Average output power = 24 W Power gain = 22 dB Drain efficiency = 33 % Third order intermodulation distortion.

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Published: Dec 13, 2010 |