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BLF8G27LS-140V - Power LDMOS transistor

Datasheet Summary

Description

140 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2600 MHz to 2700 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth (100 MHz typical).
  • Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLF8G27LS-140V
Manufacturer NXP
File Size 130.82 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF8G27LS-140V Datasheet
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BLF8G27LS-140V Power LDMOS transistor Rev. 3 — 1 May 2015 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2600 to 2700 1300 32 45 17.4 30 32 [1] 2-carrier W-CDMA 2600 to 2700 1300 28 35 17.0 29 33 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.
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