BLF8G27LS-140 Datasheet PDF - Ampleon Power LDMOS transistor Specs

BLF8G27LS-140 - Power LDMOS transistor

Datasheet Summary

Description

140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

Excellent ruggedness.
High efficiency.
Low Rth providing excellent thermal stability.
Lower output capacitance for improved performance in Doherty.

Datasheet Details

Part number	BLF8G27LS-140
Manufacturer	Ampleon
File Size	400.21 KB
Description	Power LDMOS transistor
Datasheet	BLF8G27LS-140 Datasheet
Additional preview pages of the BLF8G27LS-140 datasheet.

📁 Similar Datasheet

BLF8G27LS-140V - Power LDMOS transistor (NXP)

BLF8G27LS-150GV - Power LDMOS transistor (NXP)

BLF8G27LS-150V - Power LDMOS transistor (NXP)

BLF8G38LS-75V - Power LDMOS transistor (NXP)

BLF820 - (BLF082 / BLF820) surface Mountable RFI Filters (Tyco Electronics)

BLF861 - UHF power LDMOS transistor (NXP)

BLF861A - UHF POWER LDMOS TRANSISTOR (Advanced Semiconductor)

BLF861A - UHF power LDMOS transistor (NXP Semiconductors)

BLF871 - UHF power LDMOS transistor (NXP Semiconductors)

BLF871S - UHF power LDMOS transistor (NXP Semiconductors)

Full PDF Text Transcription

Click to expand full text

BLF8G27LS-140 Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2600 to 2700 1300 32 45 17.4 32 30 [1] 2-carrier W-CDMA 2600 to 2700 1300 28 35 17.0 29 31 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.

Published: Apr 26, 2018 |