Advanced Semiconductor BLF861A
The ASI BLF861A ia a Silicon Nchannel enhancement mode lateral DMOS push-pull transistor.DESCRIPTION
: PACKAGE STYLE .385X.850 4LFGFEATURES
:● Internal input-output matching
● Omnigold™ Metalization System
MAXIMUM RATINGS
ID VDS VGS PDISS TJ TSTG θJC 18 A 65 V ±15 V 318 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.55 °C/W 1 & 2 = DRAIN 3 & 4 = GATE 5 = SOURCE CHARACTERISTICS SYMBOL BVDSS IDSS IDSX IGSS VGS(th) RDS(on) gfs Ciss Coss Crss Gp ηD VDS = 32 V VDS = 10 V VDS = 0 V ID = 1.5 mA TC = 25 °C TEST CONDITIONS VGS = 0 V VGS = VGSth + 9 V VGS = ±15 V VDS = 10 V VGS = VGSth + 9 V VDS = 10 V VGS = 0 V Pout = 150 W f = 1.0 MHz f = 860 MHz MINIMUM 65 TYPICAL MAXIMUM 2.2 UNITS V µA A nA V mΩ S pF dB % 18 25 4.0 160 4.0 82 40 6.0 13.5 50 14.5 5.5 ID = 150 mA ID = 4.0 A ID = 4.0 A VDS = 32 V VDS = 32 V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1202
● FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1