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BLF861A Datasheet PDF

NXP Semiconductors BLF861A

The BLF861A is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; f = 860 MHz at rated load power. The BLF861A is an improved version of the BLF861 on ruggedness and is capable to withstand abrupt source or load mismatch errors under the nominal power condition.
Part No. BLF861A
Datasheet BLF861A Download
Manufacturer
NXP Semiconductors
Description UHF power LDMOS transistor
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BLF861A datasheet page 1 preview

FEATURES

● High power gain
● Easy power control
● Excellent ruggedness
● Designed to withstand abrupt load mismatch errors
● Source on underside eliminates DC isolators; reducing common mode inductance
● Designed for broadband operation (UHF band)
● Internal input and output matching for high gain and optimum broadband operation. 1 2 BLF861A PINNING - SOT540A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source connected to flange

DESCRIPTION

APPLICATIONS

● Communication transmitter applications in the UHF frequency range. 3 4 MBK777 5

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source 860 MHz test circuit. MODE OF OPERATION CW, class-AB PAL BG (TV); class-AB f (MHz) 860 860 (ch 69) VDS (V) 32 32 PL (W) 150 >150 typ. 170 (peak sync) Top view Fig.1 Simplified outline. Gp (dB) >13.5 typ. 14.5 >14 ηD (%) >50 >40 ∆Gp (dB) ≤1 note 1 Note 1.
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