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BLF861 Datasheet

Uhf Power Ldmos Transistor

Manufacturer: NXP Semiconductors

BLF861 Overview

Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic cap. The mon source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit.

BLF861 Key Features

  • High power gain
  • Easy power control
  • Excellent ruggedness
  • Source on underside eliminates DC isolators, reducing mon mode inductance
  • Designed for broadband operation (UHF band)

BLF861 Distributor