BLF861 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Preliminary specification 1999 Aug 26 Philips Semiconductors Preliminary specification UHF power LDMOS transistor Features - High power gain - Easy power control - Excellent ruggedness - Source on underside eliminates DC isolators, reducing mon mode inductance - Designed for broadband operation (UHF band). APPLICATIONS - munication transmitter applications in the UHF frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic cap. The mon source is connected to the mounting flange. 3 Top view 4 MBK777 PINNING - SOT540A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source, connected to flange DESCRIPTION Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit. MODE OF OPERATION CW, class-AB PAL BG (TV), class-AB Notes 1. Sync pression: input sync: ≥33%; output sync: 27 % LIMITING VALUES In accordance with the...