BLF861 - UHF power LDMOS transistor

NXP Semiconductors

General Description

Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic cap.

The common source is connected to the mounting flange.

Key Features

High power gain.
Easy power control.
Excellent ruggedness.
Source on underside eliminates DC isolators, reducing common mode inductance.
Designed for broadband operation (UHF band).

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BLF861 uhf power ldmos transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	BLF861
Manufacturer	NXP Semiconductors
File Size	167.55 KB
Description	UHF power LDMOS transistor
Datasheet	BLF861 Datasheet

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Other Datasheets by NXP Semiconductors

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BLF881	UHF Power LDMOS Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Preliminary specification 1999 Aug 26 Philips Semiconductors Preliminary specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (UHF band). APPLICATIONS • Communication transmitter applications in the UHF frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic cap. The common source is connected to the mounting flange. 3 Top view 4 MBK777 BLF861 PINNING - SOT540A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source, connected to flange DESCRIPTION 1 2 5 Fig.