BLF861 Description
Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic cap. The mon source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit.
BLF861 Key Features
- High power gain
- Easy power control
- Excellent ruggedness
- Source on underside eliminates DC isolators, reducing mon mode inductance
- Designed for broadband operation (UHF band)