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BLF8G09LS-400PW - Power LDMOS transistor

Datasheet Summary

Description

400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.

Features

  • Excellent ruggedness.
  • Device can operate with the supply current delivered through the video leads.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Designed for broadband operation.
  • Lower output capacitance for improved performance in Doherty.

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Datasheet preview – BLF8G09LS-400PW

Datasheet Details

Part number BLF8G09LS-400PW
Manufacturer Ampleon
File Size 437.87 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF8G09LS-400PW Datasheet
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Full PDF Text Transcription

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BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 716 to 728 3400 28 95 20.6 30 35 [1] [1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; 10 MHz carrier spacing. 1.
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