BLF8G09LS-400PGW - Power LDMOS transistor

400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.

• Excellent ruggedness.
• Device can operate with the supply current delivered through the video leads.
• High efficiency.
• Low thermal resistance providing excellent thermal stability.
• Designed for broadband operation.
• Lower output capacitance for improved performance in Doherty.