BLF8G09LS-400PGW Overview
400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit, tested on straight lead device. PAR = 8.4 dB at 0.01 % probability on CCDF;.
BLF8G09LS-400PGW Key Features
- Excellent ruggedness
- Device can operate with the supply current delivered through the video leads
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Designed for broadband operation
- Lower output capacitance for improved performance in Doherty