BLF8G09LS-400PW Power LDMOS transistor

Ampleon

Description

BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev.5 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descri.
400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz.

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Datasheet Specifications

Part number: BLF8G09LS-400PW
Manufacturer: Ampleon
File Size: 437.87 KB
Datasheet: BLF8G09LS-400PW-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Excellent ruggedness
* Device can operate with the supply current delivered through the video leads
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation
* Lower output capacitance for improved performance in Doh

Applications

* at frequencies from 716 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 7

BLF8G09LS-400PW Distributors

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BLF8G09LS-400PW Power LDMOS transistor Ampleon

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