BLF8G09LS-400PGW - Power LDMOS transistor
400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.
Test signal f IDq VDS PL(AV) Gp D ACPR5
BLF8G09LS-400PGW Features
* Excellent ruggedness
* Device can operate with the supply current delivered through the video leads
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation
* Lower output capacitance for improved performance in Doh
