Description
BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev.5 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descri.
400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz.
Features
* Excellent ruggedness
* Device can operate with the supply current delivered through the video leads
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation
* Lower output capacitance for improved performance in Doh
Applications
* at frequencies from 716 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal
f
IDq
VDS PL(AV)
Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
7
