BLF8G09LS-400PGW Datasheet - Ampleon

BLF8G09LS-400PGW Power LDMOS transistor

400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal f IDq VDS PL(AV) Gp D ACPR5.

BLF8G09LS-400PGW Features

* Excellent ruggedness

* Device can operate with the supply current delivered through the video leads

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Designed for broadband operation

* Lower output capacitance for improved performance in Doh

BLF8G09LS-400PGW Datasheet (437.87 KB)