BLF8G27LS-100V Datasheet - Ampleon

BLF8G27LS-100V Power LDMOS transistor

100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5.

BLF8G27LS-100V Features

* Excellent ruggedness

* High efficiency

* Low Rth providing excellent thermal stability

* Decoupling leads to enable improved video bandwidth (110 MHz typical)

* Designed for broadband operation (2500 MHz to 2700 MHz)

* Lower output capacitance for improved performance in Do

BLF8G27LS-100V Datasheet (382.71 KB)