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BLF8G27LS-100V Power LDMOS transistor

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Description

BLF8G27LS-100V; BLF8G27LS-100GV Power LDMOS transistor Rev.5 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descript.
100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

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Datasheet Specifications

Part number
BLF8G27LS-100V
Manufacturer
Ampleon
File Size
382.71 KB
Datasheet
BLF8G27LS-100V-Ampleon.pdf
Description
Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Decoupling leads to enable improved video bandwidth (110 MHz typical)
* Designed for broadband operation (2500 MHz to 2700 MHz)
* Lower output capacitance for improved performance in Do

Applications

* at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2500 to 2700 900 28 25 17 28

BLF8G27LS-100V Distributors

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Power LDMOS transistor Ampleon
Ampleon BLF8G27LS-100V-like datasheet