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BLF8G27LS-100V Datasheet - Ampleon

Power LDMOS transistor

BLF8G27LS-100V Features

* Excellent ruggedness

* High efficiency

* Low Rth providing excellent thermal stability

* Decoupling leads to enable improved video bandwidth (110 MHz typical)

* Designed for broadband operation (2500 MHz to 2700 MHz)

* Lower output capacitance for improved performance in Do

BLF8G27LS-100V General Description

100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5.

BLF8G27LS-100V Datasheet (382.71 KB)

Preview of BLF8G27LS-100V PDF

Datasheet Details

Part number:

BLF8G27LS-100V

Manufacturer:

Ampleon

File Size:

382.71 KB

Description:

Power ldmos transistor.
BLF8G27LS-100V; BLF8G27LS-100GV Power LDMOS transistor Rev. 5 1 September 2015 Product data sheet 1. Product profile 1.1 General descript.

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BLF8G27LS-100V Power LDMOS transistor Ampleon

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