Datasheet4U Logo Datasheet4U.com

BLF8G27LS-100GV Datasheet - Ampleon

Power LDMOS transistor

BLF8G27LS-100GV Features

* Excellent ruggedness

* High efficiency

* Low Rth providing excellent thermal stability

* Decoupling leads to enable improved video bandwidth (110 MHz typical)

* Designed for broadband operation (2500 MHz to 2700 MHz)

* Lower output capacitance for improved performance in Do

BLF8G27LS-100GV General Description

100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5.

BLF8G27LS-100GV Datasheet (382.71 KB)

Preview of BLF8G27LS-100GV PDF

Datasheet Details

Part number:

BLF8G27LS-100GV

Manufacturer:

Ampleon

File Size:

382.71 KB

Description:

Power ldmos transistor.
BLF8G27LS-100V; BLF8G27LS-100GV Power LDMOS transistor Rev. 5 1 September 2015 Product data sheet 1. Product profile 1.1 General descript.

📁 Related Datasheet

BLF8G27LS-100 Power LDMOS transistor (Ampleon)

BLF8G27LS-100P Power LDMOS transistor (Ampleon)

BLF8G27LS-100V Power LDMOS transistor (Ampleon)

BLF8G27LS-140 Power LDMOS transistor (Ampleon)

BLF8G27LS-140V Power LDMOS transistor (Ampleon)

BLF8G27LS-140V Power LDMOS transistor (NXP)

BLF8G27LS-150GV Power LDMOS transistor (Ampleon)

BLF8G27LS-150GV Power LDMOS transistor (NXP)

BLF8G27LS-150V Power LDMOS transistor (Ampleon)

BLF8G27LS-150V Power LDMOS transistor (NXP)

TAGS

BLF8G27LS-100GV Power LDMOS transistor Ampleon

Image Gallery

BLF8G27LS-100GV Datasheet Preview Page 2 BLF8G27LS-100GV Datasheet Preview Page 3

BLF8G27LS-100GV Distributor