BLF8G27LS-100GV, BLF8G27LS-100V Datasheet - Ampleon

BLF8G27LS-100GV Power LDMOS transistor

100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5.

BLF8G27LS-100GV Features

* Excellent ruggedness

* High efficiency

* Low Rth providing excellent thermal stability

* Decoupling leads to enable improved video bandwidth (110 MHz typical)

* Designed for broadband operation (2500 MHz to 2700 MHz)

* Lower output capacitance for improved performance in Do

BLF8G27LS-100V-Ampleon.pdf

BLF8G27LS-100GV Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF8G27LS-100GV, BLF8G27LS-100V. Please refer to the document for exact specifications by model.

BLF8G27LS-100GV Datasheet Preview Page 2

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Datasheet Details

Part number:

BLF8G27LS-100GV, BLF8G27LS-100V

Manufacturer:

Ampleon

File Size:

382.71 KB

Description:

Power ldmos transistor.

Note:

This datasheet PDF includes multiple part numbers: BLF8G27LS-100GV, BLF8G27LS-100V.
Please refer to the document for exact specifications by model.

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BLF8G27LS-100GV BLF8G27LS-100V Power LDMOS transistor Ampleon

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