Description
BLF8G27LS-100V; BLF8G27LS-100GV Power LDMOS transistor Rev.5 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descript.
100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
Features
* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Decoupling leads to enable improved video bandwidth (110 MHz typical)
* Designed for broadband operation (2500 MHz to 2700 MHz)
* Lower output capacitance for improved performance in Do
Applications
* at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal
f
IDq
VDS PL(AV) Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2500 to 2700
900 28 25
17 28
