Description
BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev.4 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descript.
150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
Features
* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Decoupling leads to enable improved video bandwidth (60 MHz typical)
Applications
* at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal
f
IDq
VDS PL(AV) Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2600 to 2700
1300 28 45
18 30
