BLF8G27LS-150GV, BLF8G27LS-150V Datasheet - Ampleon

BLF8G27LS-150GV, BLF8G27LS-150V, Power LDMOS transistor

BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev.4 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descript.
150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

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BLF8G27LS-150V-Ampleon.pdf

BLF8G27LS-150GV Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF8G27LS-150GV, BLF8G27LS-150V. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

BLF8G27LS-150GV, BLF8G27LS-150V

Manufacturer:

Ampleon

File Size:

463.19 KB

Description:

Power LDMOS transistor

Note:

This datasheet PDF includes multiple part numbers: BLF8G27LS-150GV, BLF8G27LS-150V.
Please refer to the document for exact specifications by model.

Features

* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Decoupling leads to enable improved video bandwidth (60 MHz typical)

Applications

* at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2600 to 2700 1300 28 45 18 30

BLF8G27LS-150GV Distributors

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BLF8G27LS-150V Power LDMOS transistor Ampleon

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