BLF8G27LS-100P Datasheet - Ampleon

BLF8G27LS-100P Power LDMOS transistor

100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%.

BLF8G27LS-100P Features

* Excellent ruggedness

* High efficiency

* Low Rth providing excellent thermal stability

* Designed for broadband operation (2500 MHz to 2700 MHz)

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects providing excellent

BLF8G27LS-100P Datasheet (936.75 KB)

BLF8G27LS-100P Datasheet Preview — Preview of BLF8G27LS-100P PDF

Datasheet Details

Part number:

BLF8G27LS-100P

Manufacturer:

Ampleon

File Size:

936.75 KB

Description:

Power ldmos transistor.

📁 Related Datasheet

BLF8G27LS-100 Power LDMOS transistor (Ampleon)

BLF8G27LS-100GV Power LDMOS transistor (Ampleon)

BLF8G27LS-100V Power LDMOS transistor (Ampleon)

BLF8G27LS-140 Power LDMOS transistor (Ampleon)

BLF8G27LS-140V Power LDMOS transistor (Ampleon)

BLF8G27LS-140V Power LDMOS transistor (NXP)

BLF8G27LS-150GV Power LDMOS transistor (Ampleon)

BLF8G27LS-150GV Power LDMOS transistor (NXP)

BLF8G27LS-150V Power LDMOS transistor (Ampleon)

BLF8G27LS-150V Power LDMOS transistor (NXP)

TAGS

BLF8G27LS-100P Power LDMOS transistor Ampleon

Image Gallery

BLF8G27LS-100P Distributor