BLF8G27LS-100P Power LDMOS transistor

Ampleon

Description

BLF8G27LS-100P Power LDMOS transistor Rev.5 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

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Datasheet Specifications

Part number: BLF8G27LS-100P
Manufacturer: Ampleon
File Size: 936.75 KB
Datasheet: BLF8G27LS-100P-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for broadband operation (2500 MHz to 2700 MHz)

Applications

* at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) Single carrier W-CDMA 2500 to 2700 860 28 25 18

BLF8G27LS-100P Distributors

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BLF8G27LS-100P Power LDMOS transistor Ampleon

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