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BLF8G27LS-100P

Power LDMOS transistor

Image Manufacturer B2B MPN Description Distributor Stock Quantity Price Buy Now
Distributor NXP Semiconductors BLF8G27LS-100PJ Trans RF MOSFET N-CH 65V 5-Pin CDFM T/R Verical 50 25 units
$87.54

BLF8G27LS-100P Datasheet (936.75 KB)

Preview of BLF8G27LS-100P PDF Datasheet

Datasheet Details

Part number:

BLF8G27LS-100P

Manufacturer:

Ampleon

File Size:

936.75 KB

Description:

Power ldmos transistor

BLF8G27LS-100P Features

* Excellent ruggedness

* High efficiency

* Low Rth providing excellent thermal stability

* Designed for broadband operation (2500 MHz to 2700 MHz)

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects providing excellent

BLF8G27LS-100P General Description

100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%.

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BLF8G27LS-100P Power LDMOS transistor Ampleon

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BLF8G27LS-100P Distributor

part
NXP Semiconductors
BLF8G27LS-100PJ
Power LDMOS transistor
Rochester Electronics
50 In Stock
Qty : 10000 units
Unit Price : $56.02