BLF888DS

UHF power LDMOS transistor

NXP

BLF888DS Features

* High efficiency

* High power gain

* Excellent ruggedness (VSWR  40 : 1 through all phases)

* Excellent thermal stability

* Integrated ESD protection

* One Doherty design covers the full bandwidth from 470 MHz to 860 MHz

* Internal input matching for ease of use

* C

BLF888DS General Description

A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V in an ultra wide Doherty application. Test signal .

BLF888DS Datasheet (132.41 KB)