BLF888DS Datasheet, transistor equivalent, NXP

BLF888DS Features

• Transistor
• High efficiency
• High power gain
• Excellent ruggedness (VSWR  40 : 1 through all phases)
• Excellent thermal stability
• Integrated ESD prot

PDF File Details

Part number:

BLF888DS

Manufacturer:

NXP ↗

File Size:

132.41kb

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📄 Datasheet

Description:

Uhf power ldmos transistor. A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it id

BLF888DS Application

• Applications The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application informat

TAGS

BLF888DS

NXP

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