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BLF888DS, BLF888D Datasheet - NXP

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BLF888DS, BLF888D UHF power LDMOS transistor

BLF888D; BLF888DS UHF power LDMOS transistor Rev.2 * 27 June 2014 Product data sheet 1.Product profile 1.1 General .
A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications.

BLF888D-NXP.pdf

This datasheet PDF includes multiple part numbers: BLF888DS, BLF888D. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

BLF888DS, BLF888D

Manufacturer:

NXP ↗

File Size:

132.41 KB

Description:

UHF power LDMOS transistor

Note:

This datasheet PDF includes multiple part numbers: BLF888DS, BLF888D.
Please refer to the document for exact specifications by model.

Features

* High efficiency
* High power gain
* Excellent ruggedness (VSWR  40 : 1 through all phases)
* Excellent thermal stability
* Integrated ESD protection
* One Doherty design covers the full bandwidth from 470 MHz to 860 MHz
* Internal input matching for ease of use
* C

Applications

* The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V in an ultra wide Doherty application. Test signal f PL(AV) Gp D (MHz) (W) (dB) (%) DVB-T (8k OFDM) 470 to 860 115 to 134 [

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