BLF8G22LS-270GV - Power LDMOS transistor
270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.
Test signal
BLF8G22LS-270GV Features
* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for broadband operation
* Decoupling leads to enable improved video bandwidth (80 MHz typical)
* Lower output capacitance for improved performance in Doherty applications
