BLF8G22LS-205V Datasheet - Ampleon

BLF8G22LS-205V Power LDMOS transistor

205 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2100 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M.

BLF8G22LS-205V Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Designed for broadband operation

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects providing excellent pre-dis

BLF8G22LS-205V-Ampleon.pdf