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BLF8G22LS-200V Datasheet - Ampleon

Power LDMOS transistor

BLF8G22LS-200V Features

* Excellent ruggedness

* High efficiency

* Low Rth providing excellent thermal stability

* Designed for broadband operation

* Decoupling leads to enable improved video bandwidth (80 MHz typical)

* Lower output capacitance for improved performance in Doherty applications

BLF8G22LS-200V General Description

200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal .

BLF8G22LS-200V Datasheet (424.63 KB)

Preview of BLF8G22LS-200V PDF

Datasheet Details

Part number:

BLF8G22LS-200V

Manufacturer:

Ampleon

File Size:

424.63 KB

Description:

Power ldmos transistor.
BLF8G22LS-200V; BLF8G22LS-200GV Power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General descript.

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TAGS

BLF8G22LS-200V Power LDMOS transistor Ampleon

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