BLF8G22LS-200V Power LDMOS transistor

Ampleon

Description

BLF8G22LS-200V; BLF8G22LS-200GV Power LDMOS transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descript.
200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.

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Datasheet Specifications

Part number: BLF8G22LS-200V
Manufacturer: Ampleon
File Size: 424.63 KB
Datasheet: BLF8G22LS-200V-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for broadband operation
* Decoupling leads to enable improved video bandwidth (80 MHz typical)

Applications

* at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA

BLF8G22LS-200V Distributors

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BLF8G22LS-200V Power LDMOS transistor Ampleon

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