200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.
Test signal
BLF8G22LS-200GV Features
* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for broadband operation
* Decoupling leads to enable improved video bandwidth (80 MHz typical)
* Lower output capacitance for improved performance in Doherty applications
Datasheet Details
BLF8G22LS-200GV, BLF8G22LS-200V
Ampleon
424.63 KB
Power ldmos transistor.
This datasheet PDF includes multiple part numbers: BLF8G22LS-200GV, BLF8G22LS-200V.
Please refer to the document for exact specifications by model.
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