Description
BLF8G22LS-200V; BLF8G22LS-200GV Power LDMOS transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descript.
200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.
Features
* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for broadband operation
* Decoupling leads to enable improved video bandwidth (80 MHz typical)
Applications
* at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal
f
IDq
VDS PL(AV)
Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
