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BLF8G22LS-200GV, BLF8G22LS-200V Datasheet - Ampleon

BLF8G22LS-200GV Power LDMOS transistor

200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal .

BLF8G22LS-200GV Features

* Excellent ruggedness

* High efficiency

* Low Rth providing excellent thermal stability

* Designed for broadband operation

* Decoupling leads to enable improved video bandwidth (80 MHz typical)

* Lower output capacitance for improved performance in Doherty applications

BLF8G22LS-200V-Ampleon.pdf

This datasheet PDF includes multiple part numbers: BLF8G22LS-200GV, BLF8G22LS-200V. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

BLF8G22LS-200GV, BLF8G22LS-200V

Manufacturer:

Ampleon

File Size:

424.63 KB

Description:

Power ldmos transistor.

Note:

This datasheet PDF includes multiple part numbers: BLF8G22LS-200GV, BLF8G22LS-200V.
Please refer to the document for exact specifications by model.

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TAGS

BLF8G22LS-200GV BLF8G22LS-200V Power LDMOS transistor Ampleon

BLF8G22LS-200GV Distributor