Datasheet Specifications
- Part number
- BLL6H1214L-250
- Manufacturer
- NXP ↗
- File Size
- 168.65 KB
- Datasheet
- BLL6H1214L-250_NXP.pdf
- Description
- LDMOS L-band Radar Power Transistor
Description
BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev.01 * 11 December 2009 Objective data sheet 1.Product profile 1.1 Ge.
Features
* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 500 μs with δ of 20 %: Output power = 250 W Power gain = 17 dB Efficiency = 55 %Applications
* in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 50 PL (W) 250 Gp (dB) 17 ηD (%) 55 tr (ns) 15 tf (ns) 5 CAUTION ThisBLL6H1214L-250 Distributors
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