BLL6H1214L-250 Datasheet, Transistor, NXP

BLL6H1214L-250 Features

• Transistor
• Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 500 μs with δ of 20 %: ‹ Output power = 250 W ‹ Power g

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BLL6H1214L-250

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📄 Datasheet

Description:

Ldmos l-band radar power transistor. 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typica

BLL6H1214L-250 Application

• Applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100 mA

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BLL6H1214L-250

NXP

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