BLL6H1214L-250 Datasheet - NXP

BLL6H1214L-250 LDMOS L-band Radar Power Transistor

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 5.

BLL6H1214L-250 Features

* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 500 μs with δ of 20 %: Output power = 250 W Power gain = 17 dB Efficiency = 55 %

* Easy power control

* Integrated ESD protection

* High fle

BLL6H1214L-250_NXP.pdf