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BLL6H0514L-130 - LDMOS driver transistor

BLL6H0514L-130 Description

BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descrip.
130 W LDMOS transistor intended for pulsed applications in the 0.

BLL6H0514L-130 Features

* Easy power control
* Integrated ESD protection
* High flexibility with respect to pulse formats
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (0.5 GHz to 1.4 GHz)
* Compliant to Directive 2002/95/EC, regard

BLL6H0514L-130 Applications

* in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit. Mode of operation f tp  VDS PL Gp RLin D (MHz) (s) (%) (V) (W) (dB) (dB) (%) pulsed RF 960 to 1215 128 10 50 130 19 10 54 1200 to 14

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Datasheet Details

Part number
BLL6H0514L-130
Manufacturer
Ampleon
File Size
322.80 KB
Datasheet
BLL6H0514L-130-Ampleon.pdf
Description
LDMOS driver transistor

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LDMOS driver transistor Ampleon
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