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BLL1214-250

L-band radar LDMOS transistor

BLL1214-250 Features

* High power gain

* Easy power control

* Excellent ruggedness

* Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICATIONS

* L-band radar applications in the 1200 to 1400 MHz frequency range. DESCRIPTION Silicon N-channel en

BLL1214-250 General Description

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange. Top view handbook, halfpage BLL1214-250 PINNING - SOT502A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 2.

BLL1214-250 Datasheet (79.30 KB)

Preview of BLL1214-250 PDF

Datasheet Details

Part number:

BLL1214-250

Manufacturer:

NXP ↗

File Size:

79.30 KB

Description:

L-band radar ldmos transistor.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug.

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BLL1214-250 L-band radar LDMOS transistor NXP

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