BLL1214-250 Datasheet, Transistor, NXP

BLL1214-250 Features

• Transistor
• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICA

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Part number:

BLL1214-250

Manufacturer:

NXP ↗

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79.30kb

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📄 Datasheet

Description:

L-band radar ldmos transistor. Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The

BLL1214-250 Application

• Applications
• L-band radar applications in the 1200 to 1400 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-M

TAGS

BLL1214-250

NXP

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