BLL8H0514L-130 Datasheet - NXP

BLL8H0514L-130 LDMOS driver transistor

130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit. Test signal f tp  VDS PL Gp RLin D Pdroop(pulse) tr (MHz) (s) (%) (V) (W) (dB) (d.

BLL8H0514L-130 Features

* Easy power control

* Integrated dual side ESD protection

* High flexibility with respect to pulse formats

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* Designed for broadband operation (0.5 GHz to 1.4 GHz)

* Compliant to Directive 2002/95/

BLL8H0514L-130-NXP.pdf