BLL8H0514L-130 LDMOS driver transistor

NXP

Description

BLL8H0514L-130; BLL8H0514LS-130 LDMOS driver transistor Rev.2 * 9 February 2015 Product data sheet 1.Product profile 1.1 General descript.
130 W LDMOS transistor intended for pulsed applications in the 0.

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Datasheet Specifications

Part number: BLL8H0514L-130
Manufacturer: NXP ↗
File Size: 125.72 KB
Datasheet: BLL8H0514L-130-NXP.pdf
Description: LDMOS driver transistor

Features

* Easy power control
* Integrated dual side ESD protection
* High flexibility with respect to pulse formats
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (0.5 GHz to 1.4 GHz)
* Compliant to Directive 2002/95/

Applications

* in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit. Test signal f tp  VDS PL Gp RLin D Pdroop(pulse) tr (MHz) (s) (%) (V) (W) (dB) (dB) (%) (dB) (ns) tf (ns) pulsed RF 960 to 1215 128 10

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BLL8H0514L-130 LDMOS driver transistor NXP

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