Datasheet Details
Part number:
BLL8H1214L-500
Manufacturer:
Ampleon
File Size:
480.54 KB
Description:
LDMOS L-band radar power transistor
Features
* Easy power control
* Integrated dual side ESD protection
* High flexibility with respect to pulse formats
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (1.2 GHz to 1.4 GHz)
* Internally matched for ease of
BLL8H1214L-500, LDMOS L-band radar power transistor
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Table 1.
Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 150 mA; in a class-AB production test circuit.
Test signal f VDS PL Gp D tr tf (GHz) (V) (W
BLL8H1214L-500 Distributor
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