Description
BLL8H0514L-130; BLL8H0514LS-130 LDMOS driver transistor Rev.2 * 9 February 2015 Product data sheet 1.Product profile 1.1 General descript.
130 W LDMOS transistor intended for pulsed applications in the 0.
Features
* Easy power control
* Integrated dual side ESD protection
* High flexibility with respect to pulse formats
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (0.5 GHz to 1.4 GHz)
* Compliant to Directive 2002/95/
Applications
* in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit. Test signal f
tp VDS PL Gp RLin D Pdroop(pulse) tr
(MHz)
(s) (%) (V) (W) (dB) (dB) (%) (dB)
(ns)
tf (ns)
pulsed RF 960 to 1215 128 10
