Description
BLL8H1214L-250; BLL8H1214LS-250 LDMOS L-band radar power transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 Gen.
250 W LDMOS power transistor intended for L-band radar applications in the 1.
Features
* Easy power control
* Integrated dual side ESD protection
* High flexibility with respect to pulse formats
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (1.2 GHz to 1.4 GHz)
* Internally matched for ease of
Applications
* in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit. Test signal
f
VDS PL
Gp D
tr
tf
(GHz)
(V) (W)
(dB) (%) (ns)
(ns)
pulsed RF
1.2 to 1.4 50
250
17 55
15
5
1
