Part number:
BLL1214-250R
Manufacturer:
NXP ↗ Semiconductors
File Size:
163.24 KB
Description:
Ldmos l-band radar power transistor.
BLL1214-250R_NXPSemiconductors.pdf
Datasheet Details
Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap.
The common source is connected to the flange.
Table 1.
Test information Typical RF performance at Th = 25 °C; tp = 1 ms; δ = 10 %; in a common source class-AB test circuit
BLL1214-250R Features
* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 36 V, an IDq of 150 mA, a tp of 1 ms with δ of 10 %: Output power = 250 W Power gain = 13 dB Efficiency = 47 %
* High power gain
* Easy power control
* Excellent ruggedness
BLL1214-250R_NXPSemiconductors.pdf
Datasheet Details
BLL1214-250R
NXP ↗ Semiconductors
163.24 KB
Ldmos l-band radar power transistor.
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