BLL1214-250R - LDMOS L-band radar power transistor

Product Overview

NXP Semiconductors

Part number	BLL1214-250R
Manufacturer	NXP Semiconductors
File Size	163.24 KB
Description	LDMOS L-band radar power transistor
Datasheet	BLL1214-250R Datasheet
Additional preview pages of the BLL1214-250R datasheet.

Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap.

Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 36 V, an IDq of 150 mA, a tp of 1 ms with δ of 10 %: Output power = 250 W Power gain = 13 dB Efficiency = 47 %.
High power gain.
Easy power control.
Excellent ruggedness.
Source on mounting base eliminates DC isolators, reducing common mode inductance. 1.3.

📁 Similar Datasheet

BLL1214-250 - L-band radar LDMOS transistor (NXP)
BLL1461 - 1A Linear Regulator (BELLING)
BLL2453 - 500KHz COT Synchronous Step-Down DC/DC Converter (BELLING)
BLL2681 - 70V High Efficiency Synchronous Step-Down DC/DC Converter (BELLING)
BLL2740 - 100% Duty Cycle CC&CV Buck Converter (BELLING)
BLL2741Q - 4A CV and Dual CC Step-Down DC/DC Converter (BELLING)
BLL6G1214L-250 - LDMOS L-band radar power transistor (Ampleon)
BLL6H0514-25 - LDMOS driver transistor (Ampleon)

Other Datasheets by NXP Semiconductors

Published: Jun 18, 2010 |