BLL1214-250R Datasheet - NXP Semiconductors

BLL1214-250R LDMOS L-band radar power transistor

Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange. Table 1. Test information Typical RF performance at Th = 25 °C; tp = 1 ms; δ = 10 %; in a common source class-AB test circuit.

BLL1214-250R Features

* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 36 V, an IDq of 150 mA, a tp of 1 ms with δ of 10 %: Output power = 250 W Power gain = 13 dB Efficiency = 47 %

* High power gain

* Easy power control

* Excellent ruggedness

BLL1214-250R_NXPSemiconductors.pdf