Datasheet Details
- Part number
- BLL1214-250R
- Manufacturer
- NXP ↗ Semiconductors
- File Size
- 163.24 KB
- Datasheet
- BLL1214-250R_NXPSemiconductors.pdf
- Description
- LDMOS L-band radar power transistor
BLL1214-250R Description
BLL1214-250R LDMOS L-band radar power transistor Rev.01 * 4 February 2010 www.DataSheet4U.com Product data sheet 1.Product profile 1.1 Ge.
Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap.
BLL1214-250R Features
* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 36 V, an IDq of 150 mA, a tp of 1 ms with δ of 10 %: Output power = 250 W Power gain = 13 dB Efficiency = 47 %
* High power gain
* Easy power control
* Excellent ruggedness
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