BLL1214-250R Datasheet - NXP Semiconductors

BLL1214-250R, LDMOS L-band radar power transistor

BLL1214-250R LDMOS L-band radar power transistor Rev.01 * 4 February 2010 www.DataSheet4U.com Product data sheet 1.Product profile 1.1 Ge.
Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap.

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BLL1214-250R_NXPSemiconductors.pdf

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Datasheet Details

Part number:

BLL1214-250R

Manufacturer:

NXP ↗ Semiconductors

File Size:

163.24 KB

Description:

LDMOS L-band radar power transistor

Features

* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 36 V, an IDq of 150 mA, a tp of 1 ms with δ of 10 %: Output power = 250 W Power gain = 13 dB Efficiency = 47 %
* High power gain
* Easy power control
* Excellent ruggedness

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BLL1214-250R LDMOS L-band radar power transistor NXP Semiconductors

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