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BLL1214-250R - LDMOS L-band radar power transistor

BLL1214-250R Description

BLL1214-250R LDMOS L-band radar power transistor Rev.01 * 4 February 2010 www.DataSheet4U.com Product data sheet 1.Product profile 1.1 Ge.
Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap.

BLL1214-250R Features

* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 36 V, an IDq of 150 mA, a tp of 1 ms with δ of 10 %: ‹ Output power = 250 W ‹ Power gain = 13 dB ‹ Efficiency = 47 %
* High power gain
* Easy power control
* Excellent ruggedness

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LDMOS L-band radar power transistor NXP Semiconductors
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