BLL1214-250R Datasheet, Transistor, NXP Semiconductors

BLL1214-250R Features

• Transistor
• Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 36 V, an IDq of 150 mA, a tp of 1 ms with δ of 10 %: ‹ Output power = 250 W ‹ Power gai

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BLL1214-250R

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📄 Datasheet

Description:

Ldmos l-band radar power transistor. Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The

BLL1214-250R Application

• Applications
• L-band radar applications in the 1.2 GHz to 1.4 GHz frequency range NXP Semiconductors BLL1214-250R www.DataSheet4U.com LDM

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BLL1214-250R

NXP Semiconductors

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