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BLL6H0514L-130 LDMOS driver transistor

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Description

DataSheet.in BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev.1 * 9 August 2010 Preliminary data sheet 1.Product profile 1.1 Ge.
130 W LDMOS transistor intended for pulsed applications in the 0.

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Features

* Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant

Applications

* in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (μs) 128 300 δ (%) 10 10 VDS (V) 50 50 PL (W) 130 130 Gp (dB) 19 17 RLin (dB) 10

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📁 Related Datasheet

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📌 All Tags

BLL6H0514L-130 LDMOS driver transistor NXP Semiconductors
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